Abstract
ABSTRACTCurrent IC technology uses SiO2 almost exclusively; however, several technological and reliability problems warrant the search for an alternative dielectric. Proposed alternatives are silicon nitride and nitrided SiO2. This paper reviews the work on thermal nitridation of Si and SiO2. Several of the experimental thermal nitridation processes used to achieve good thin dielectrics are discussed. At this time a clear mechanism for the nitridation of Si is not available. The two theoretical attempts to model this process are reviewed. Innovative processes to accomplish the nitridation, such as plasma growth, etc., are presented. Finally, the influence of nitridation on stacking faults and diffusions is also reviewed.
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