Abstract
The effect of the presence of a thermally grown Si3N4 film on Sb diffusion in Si during annealing in Ar at 1100 °C has been investigated. Enhanced Sb diffusion under thermal nitride was observed and the enhancement effect disappeared when the nitride was removed before Ar annealing. These results strongly suggest that the enhanced Sb diffusion observed during thermal nitridation of Si is not directly related to the growth of thermal nitride. These effects are instead attributed to stresses in the thermal nitride film. Possible mechanisms of dopant diffusion affected by stresses in thin films are discussed.
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