Abstract
High-resolution vibrational electron energy loss spectroscopy has been used to study the adsorbed state of NO on the Si(100)(2×1) surface. At 300 K, NO is adsorbed dissociatively on the Si(100) surface in the disordered structure, and the Si 3N and SiOSi species are formed. By heating at 1200–1300 K, the O adatoms are removed from the surface and the silicon nitride is formed; the (2×1) structure is recovered, which is interpreted to indicate that the nitride is formed mainly in the subsurface region.
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