NIR photoluminescence of bismuth-doped CsCdBr3 – The first ternary bromide phase with a univalent bismuth impurity center

Abstract

Single crystals of ternary bromide phase CsCdBr3 doped with univalent bismuth cations are prepared for the first time by the Bridgman method. Bi+ impurity center emits a broadband long-lived near-infrared photoluminescence with a maximum at ~1053nm. The characteristics of this photoluminescence and its relations with the energy spectrum of Bi+ impurity center are discussed. A comparison of Bi+ photoluminescence in CsCdBr3 and ternary chlorides (studied previously) is performed.