Abstract
High unloaded quality factor (Qu), zero temperature coefficient of resonant frequency (τf) and high relative permittivity (εr) microwave dielectric ceramics have been fabricated based on BaZn1/3Nb2/3O3. Properties have been optimized for the composition, 0.9Ba([Zn0.60Co0.40]1/3Nb2/3)O3–0.1Ba(Ga0.5Ta0.5)O3 for which Qu=32 000 @ 3.05 GHz, εr=35, and τf=0. The new compounds are disordered according to x-ray diffraction (XRD) and may be indexed using a simple perovskite unit cell, a=4.09 Å. Small peaks (e.g., d≈3.01 Å, relative intensity, 4.5) attributed to a barium niobate second phase are also present in XRD patterns. These ceramics are suitable in terms of cost and performance for base stations supporting third generation architecture.
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