Abstract
Thin Ni films were prepared at room temperature by Ni metal vapor deposition on Si substrates and simultaneous irradiation by Ar ions with an energy of 2–20 keV. The reaction of Ni and Si during dynamic ion-beam mixing was studied. The fluences of the ion beam were 4.7 × 1017 and 8.9 × 1017 cm−2, and arrival rate ratios Ni/Ar were 9.7 and 5.1. Concentration profiles of Ni, Si, Ar, C, and O were analyzed with Auger electron spectroscopy; the surface morphology and the crystalline structure were investigated with a cross-sectional scanning electron microscope and X-ray diffractometry. The theoretical profiles were calculated with the dynamic Monte-Carlo simulation code T-DYN for comparison with the experimentally obtained profiles. It was possible to observe the ballistic mixing effects and also thermally activated formation of nickel silicide.
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