Abstract
Nickel is incorporated into silicon wafers during chemomechanical polishing in an alkaline Ni‐contaminated slurry at room temperature. The nickel in‐diffusion is detected by DLTS depth profiles of a novel Ni183 level, which is formed due to a reaction between the diffusing nickel and the VO centers introduced before the polishing. The Ni183 profile extends up to 10 μm after a 2 min polishing. The available data provide a lower estimate for the room‐temperature nickel diffusivity DNi > 10−9 cm2 s−1.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have