Abstract
Nickel doped copper oxide thin films were grown on glass and silicon substrates using radiofrequency sputtering in an argon–oxygen atmosphere. The impact of doping on the structural, optical, and electrical properties of copper oxide was examined for various contents of nickel. The X-ray diffraction results revealed the polycrystalline monoclinic structure of copper oxide for the prepared films. Raman spectroscopy confirmed that only the copper oxide phase is evidenced in nickel-doped copper oxide films. The band gap energy increased with increasing nickel content. All the sputtered films showed p-type conduction and the resistivity depends on the nickel content.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
