Abstract
In Silicon, impurities introduce recombination centers and degrade the minority carrier lifetime. It is therefore important to identify the nature of these impurities through their characteristics: the capture cross sectionσand the defect levelEt. For this purpose, a study of the bulk lifetime of minority carriers can be carried out. The temperature dependence of the lifetime based on the Shockley-Read-Hall (SRH) statistic and related to recombination through defects is studied. Nickel and gold in p-type Si have been selected for the SRH lifetime modeling. The objective of the analysis is to carry out a study to evaluate gold and nickel identification prior to temperature-dependent lifetime measurements using the microwave phase-shift (μW-PS) technique. The μW-PS is derived from the PCD technique and is sensitive to lower impurity concentrations. It has been shown that both gold and nickel can be unambiguously identified from the calculated TDLS curves.
Highlights
In 2019, 27% of the global electricity generation was ensured by the use of renewable energies [1] and the energy mix is constantly evolving
The temperature dependence of the capture cross sections associated to the gold levels was measured in n-type Si [30]
Recombination through defect levels in the band gap of silicon has the impact of limiting the minority carrier lifetime inducing efficiency losses in crystalline silicon
Summary
In 2019, 27% of the global electricity generation was ensured by the use of renewable energies [1] and the energy mix is constantly evolving. This change is driven by environmental issues, climate change policies, economical and geopolitical motivations for energy independence. The penetration rate of solar energy remains low, it represents around 3% of global power output despite its high potential. The international energy agency (IEA) forecasts a solar photovoltaic power generation as high as 16% in 2050. Due to its high availability, well-established technology showing high conversion efficiency and good durability, silicon dominates the photovoltaic market. Despite the high-efficiency level of this technology, silicon ingot fabrication processes still face challenges in improving material properties by reducing defects and impurities concentrations
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