Abstract
Due to the wide bandgap of SiC, SiC-based photoelectric devices can be only driven by ultraviolet light, which essentially limit its application for a detection of visible and infrared light. In order to realize the non-UV operation of the SiC-based photoelectric devices applied in high temperature and high power regions, Ni/n-Si/N+-SiC heterostructure Schottky barrier photodiode has been studied. Energy-band structure of the Ni/n-Si/N+-6H-SiC structure was simulated by Silvaco-TCAD. And the non-UV photodiode with this structure was fabricated on 6H-SiC(0001) substrate. J-V measurements indicate that the device has good rectifying behavior with a rectification ratio up to 200 at 5V, and the turn-on voltage is about 0.7V. Under non-ultraviolet illumination of 0.6W/cm2, the device demonstrates significant photoelectric response with a photocurrent density of 2.9mA/cm2 and an open-circuit voltage of 63.0mV. Non- ultraviolet operation of the SiC-based photoelectric device is initially realized.
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