Abstract

Transition metal ion doping is an effective strategy by which to enhance the photocatalytic activity of semiconductor materials. Herein, Ni-doped TiO 2 /Ti 3 C 2 photocatalysts were designed and fabricated using a simple dipping method and their catalytic performance was verified via the degradation of rhodamine B (RhB). Ni doping induces the formation of a defect energy level in TiO 2 , which shortens the transition distance of photogenerated electrons. Ti 3 C 2 acts as a hole acceptor, which is conducive to the transfer of photogenerated charge. The results show that the Ni-doped TiO 2 /Ti 3 C 2 heterojunction structure exhibits the lowest photoluminescence peak intensity, the highest instantaneous current, and excellent photocatalytic performance compared to TiO 2 /Ti 3 C 2 and TiO 2 . At optimal Ni content, the removal efficiency of RhB is 90%, around 3.7 times higher than that of pure TiO 2 . This work details the preparation of an excellent Ni-doped heterojunction structure for enhanced photocatalytic performance, demonstrating an effective strategy by which to improve the charge separation ability. • Ni-doped hybrids of TiO 2 and Ti 3 C 2 MXene structure was prepared for enhanced photocatalytic performance. • The charge separation ability of TiO 2 was enhanced due to the doping of Ni and the coupling of co-catalyst Ti 3 C 2 . • The removal efficiency of RhB by Ni–TiO 2 /Ti 3 C 2 was 3.7 times higher than that of pure TiO 2 .

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