Abstract
From the progressing results, it was found that thin film using 52 wt% Ni - 38 wt% Cr - 3 wt% Al - 4 wt% Mn - 3 wt% Si target has good characteristics for low TCR (temperature coefficients of resistance) and high resistivity. The optimum sputtering condition was DC 250 W, 5 mtorr, and 50 sccm and the proper annealing condition was <TEX>$350^{\circ}C$</TEX>/3.5 hr in air atmosphere. At these fabricated conditions, thin film resistors with TCR values of less than <TEX>${\pm}10ppm/^{\circ}C$</TEX> were obtained. The TCR of the packaged-samples made at proper fabrication conditions was <TEX>$-3{\sim}15ppm/^{\circ}C$</TEX> after the thermal cycling and <TEX>$-20{\sim}180ppm/^{\circ}C$</TEX> after PCT (pressure cooker test), we could confirm reliability for the thin film resistor and find the need for enduring research about packaging method.
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