Abstract
The authors fabricated low-resistivity Ni/Au ohmic contacts on N-doped p-type ZnO films using electron-beam evaporation and the transmission line model technique. Both as-deposited and thermally annealed contacts showed ohmic conduction, and the specific contact resistivity decreased with the increase of annealing temperature. The lowest specific contact resistivity of 2.06 X 10 -4 Ω cm 2 was achieved after annealing at 600°C. Secondary ion mass spectroscopy indicated that activation of nitrogen acceptors and the interdiffusion at the metal/ZnO interface after annealing were accounted for by the improvement of ohmic conduction. The results also showed that the fabricated contacts were thermally stable.
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