Abstract
Growth conditions are used to control the residual carbon impurity incorporation in p++-GaN layers. Specific contact resistance (ρc) with various residual carbon concentrations has been investigated through the circular transmission line model (CTLM) method and secondary ion mass spectroscopy (SIMS) analysis. A correlation between residual carbon and ρc indicates that incorporation of proper carbon impurity can be an advantage for Ohmic contact, although carbon can also act as a compensating donor to worsen the Ohmic contact at a very high concentration. Finally, ρc is improved to 6.80×10−5Ω×cm2 with a carbon concentration of 8.3×1017cm−3 in p++-GaN layer, when the growth temperature, pressure and flow rate of CP2Mg and TMGa are 940°C, 100Torr, 3μmol/min and 28μmol/min, respectively.
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