( NH4 ) 2Sx-Treated AlGaN MIS Photodetectors with LPD SiO2 Layer

Abstract

treatment was employed to enhance the efficiency of AlGaN metal–insulator–semiconductor (MIS) photodetectors (PDs) with a liquid phase deposited (LPD) layer. With treatment, one can reduce the reverse leakage current of the PD by 2 orders of magnitude and enhance the effective Schottky barrier height from 0.77 to 0.86 eV. Also, the treatment can also significantly reduce the interface state density, , at the AlGaN/LPD oxide interface. Photo-to-dark current ratio observed from the PDs with treatment was also significantly larger.