Abstract
This article describes a novel preepitaxial cleaning treatment of GaAs, using a (NH4)2Sx solution. This cleaning treatment is characterized by low carbon and oxygen surface contamination. The treated‐surface presents a low temperature (2×1) reconstruction (<500 °C), which allows selective chemical beam epitaxy processes at low temperature. Applying this process to the selective regrowth of the base contact layer of heterojunction bipolar transistors (HBTs), high dc current gains are measured, similar to those obtained with HBTs processed in a conventional way.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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