Next Generation Chip Embedding Technology for High Efficient Mid Power Modules

Abstract

Abstract Embedding active dies into the substrate is fulfilling integration requirements for modern communication devices, and furthermore embedding was shown to have beneficial effects on electrical performance and thermal dissipation, especially for mid power modules (from a few hundred watts to 5kW) [1–3]. It comes with strong advantages as the power modules operate at higher frequencies (MHz range) and aim to apply smaller capacitors and inductors. This approach reduces the overall PCB size and weight from system point of view. These beneficial effects were observed especially for embedded power dies that were already mounted in a lead frame cavity when embedding [3]. In this paper we shall report the development of embedded technologies for power modules mounted in a lead frame cavity and compare electrical performance, thermal dissipation and reliability results with conventional PQFN packaging [3]. We shall also report electrical performance in various operation frequency ranges from a few kHz to MHz to address the benefit on high switching frequency power modules for SiC or GaN applications. We will also address if the EMI effect can be eliminated by using chip embedded technology instead of wire bonding connection from driver to gate pad of power MOSFET chip. We will conclude that the challenges of electrical performance and thermal dissipation required for today's power modules can successfully be overcome by next generation power modules based on lead frame chip embedding.