Abstract
Near edge X-ray absorption fine structure (NEXAFS) measurements at the N–K-edge are used to study the effect of 100 keV Si ion implantation in GaN samples grown by ECR-MBE. It is demonstrated that the implantation-induced increase of the static disorder is detectable in the NEXAFS spectra as a broadening of the NEXAFS resonances. In addition to that, implantation introduces two new resonance lines, the RL1 and RL2, in the NEXAFS spectra. The RL1, which appears at 1.7 eV below the absorption edge, is observed in all the implanted samples and is attributed to nitrogen interstitials and/or N antisite defects. The RL2 appears at about 1.0 eV above the absorption edge, when the implantation dose exceeds 1×10 16 cm −2, and it is attributed to nitrogen dangling bonds created by the implantation. Atomic force microscopy shows that the surface roughness decreases with increasing implantation dose while the overall surface morphology changes significantly after implantation with a dose that causes amorphization.
Published Version
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