Abstract
Abstract In Ca, Sr-rich region with orthorhombic perovskite-type structure, successful results such as high dielectric Q (2000∼3000 at 11GHz), suitable dielectric constant, (29∼32) and widely adjustable temperature coefficient of dielectric constant (−50 to +50 ppm/°C) were obtained. It was also found that substitution of small amounts of Ti for Zr brings some decrease in temperature coefficient with increase in dielectric Q. Using above described ceramics in microwave integrated circuits oscillator with GaAs FET, a compensation for temperature dependence of circuit elements was well achieved within the value which corresponds to the deviation of oscillation frequency within ± 500KHz at 11.66GHz (−20∼+60°C).
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