Abstract
Vanadium-doped GaAs was grown by metalorganic vapor-phase epitaxy (MOVPE) using vanadium (IV) chloride VCl 4 as a novel dopant source. The optimum growth conditions were achieved using reflectometry with a 632.8 nm laser beam. A reduction in the growth rate of V-doped GaAs was observed and attributed to the etching by Cl species associated to the use of high flow of VCl 4. The incorporation of vanadium in GaAs was investigated by secondary ion mass spectroscopy (SIMS) measurements. Samples were also characterized by room temperature Hall effect. Electron concentrations ranging from 10 13 to 2×10 17 cm −3 have been obtained. The maximum resistivity is about 715 Ω cm. For all samples high compensation ratio larger than 0.7 was observed. The comparison between only silicon-doped GaAs and silicon–vanadium Co-doped GaAs, showed that there was no effect in modifying the compensation ratio.
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