Abstract
The doping characteristics of low-pressure MOVPE (metal organic vapor phase epitaxy)-grown n-type InP layers using phenylsilane (PhSiH 3) as a metalorganic Si precursor are described in order to realize all metalorganic source epitaxy. The Si-doping levels from 1× 10 17 to 1×10 19 cm −3 were successfully controlled by increasing phenylsilane flow rate, and excellent reproducibility was achieved. Smooth surface morphologies were observed in this doping range. We have experimentally verified that the carrier concentration of Si increased with decreasing V/III ratio and increasing growth temperature. It is proposed that the reaction of phenylsilylene (PhSiH) from pyrolysis of PhSiH 3 was dominant in the doping mechanism of PhSiH 3. The compensation ratios (Na −/Nd +) for all samples were lower than 0.3, which indicates that the Si-doped layers have low impurities, including carbon incorporation, which was confirmed by secondary ion mass spectroscopy (SIMS) measurement. These results show that PhSiH 3 is a promising replacement for hazardous n-type doping gases of silane or disilane.
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