Abstract
A new type of AlGaAs/InGaAs/GaAs heterostructures with energy barriers formed in the AlGaAs transistor layers adjacent to the InGaAs channel, modulation-doped with donors and acceptors is presented. The height of the barriers associated with the potential of the space charge region in AlGaAs layers reaches 0.8 eV, which makes it possible to double the concentration of electrons in the channel, prevent the transition of hot electrons heated by the electric field into surrounding layers, and increase their saturation drift velocity by around $$1.2{-}1.3$$ times. As a result, microwave power output density of the transistor exceeded the world level by more than 50 $$\%$$ .
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