Abstract

This paper presents the experiments we have performed to obtain microphotonic components using a new technique: the anisotropic wet etching of Si &lt;111&gt;-oriented wafers. The anisotropic etching was combined with an isotropic pre-etch step, followed or not by sidewall passivation. The influence of the mask orientation and layout on the shape and size of the etched cavity was studied and then the masks and the technological process for fabrication of S<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> and c-Si freestanding structures were established. Movable Si<sub>3</sub>N<sub>4</sub> micromirrors, SiO<sub>2</sub> or c-Si waveguides were obtained using a low-cost technological process. These components can be further integrated with optoelectronic devices on a silicon substrate.

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