Abstract
A novel growth technique of boron-doped multi-walled carbon nanotubes (MWNTs) was developed. Our new technique uses a methanol solution of boric acid as a source material. Resistivity of the boron-doped MWNTs was successfully reduced independently of chirality by our technique. Temperature dependence of resistivity in each individual boron-doped MWNT was measured by using small-sized four-point contacts, which were fabricated by electron beam (EB) lithography technique. Conduction carriers were introduced into the MWNT effectively by boron-doping.
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