Abstract
The dependency of device degradation on bending direction and channel length is analyzed in terms of bandgap states in amorphous indium-gallium-zinc-oxide (a-IGZO) films. The strain distribution in an a-IGZO film under perpendicular and parallel bending of a device with various channel lengths is investigated by conducting a three-dimensional mechanical simulation. Based on the obtained strain distribution, new device simulation structures are suggested in which the active layer is defined as consisting of multiple regions. The different arrangements of a highly strained region and density of states is proportional to the strain account for the measurement tendency. The analysis performed using the proposed structures reveals the causes underlying the effects of different bending directions and channel lengths, which cannot be explained using the existing simulation methods in which the active layer is defined as a single region.
Highlights
Introduction on Bending Direction and ChannelFlexible displays have attracted considerable attention as next-generation displays that are flexible, light, and not breakable [1]
Amorphous indium-gallium-zinc-oxide (a-IGZO) films offer the advantages of high mobility, small sub-threshold swing, low leakage current, and good uniformity owing to their amorphous phase, which makes them suitable for manufacturing large-area displays [10]
Several research groups have extracted the density of states of the active layer by conducting computer-aided design simulations and verified that the number of donor-like trap states increases with repeated bending [15,21,22]
Summary
Flexible displays have attracted considerable attention as next-generation displays that are flexible, light, and not breakable [1]. The general method of calculating strain assumes a simple onedimensional structure and outputs a single strain value [23], irrespective of the bending direction and channel length. As can be inferred from the studies in the literature in which various bending radii have been used, a larger strain causes more severe device degradation [8,12]. It is necessary to investigate the intensity and pattern of strain distribution in a device under each stress condition. Based on these distributions, a new device simulation method for flexible TFT suggested. The new method accounts for the dependency of device degradation on bending direction and the channel length
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
