Abstract
A semiempirical strong inversion current-voltage (I-V) model for submicrometer n-channel MOSFETs which is suitable for circuit simulation and rapid process characterization is proposed. The model is based on a more accurate velocity-field relationship in the linear region and finite drain conductance due to the channel length modulation effect in the saturation region. The parameter extraction starts from the experimental determination of the MOSFET saturation current and saturation voltage by differentiating the output characteristics in a unified and unambiguous way. These results are used in order to systematically extract the device and process parameters such as the effective electron saturation velocity and mobility, drain and source series resistances, effective gate length and characteristic length for channel length modulation, and short-channel effects. The values agree well with other independent measurements. The results of experimental studies of wide n-MOSFETs with nominal gate length of 0.8, 1.0, and 1.2 mu m fabricated by an n-well CMOS process are reported. The calculated I-V characteristics using the extracted parameters show excellent agreement with the measurement results.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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