Abstract
Experimental data and calculated results are presented to show that the source and drain series resistances in GaAs MESFETs are gate-voltage dependent. This dependence is caused by the gate-voltage modulation of the ungated portions of the channel. A simple analytical model is proposed that accounts for this dependence by introducing an effective gate-voltage-dependent gate length. For nominal 1- mu m gate devices the effective gate length is 0.2-0.3 mu m longer than the metallurgical gate length.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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