Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs

Y.H Byun,A Peczalski,M.S Shur,F.L Schuermeyer

doi:10.1109/16.2543

Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs

Y.H Byun, A Peczalski + Show 2 more

https://doi.org/10.1109/16.2543

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Journal: IEEE Transactions on Electron Devices	Publication Date: Jan 1, 1988
Citations: 47

Affiliation: Honeywell (United States), University of Minnesota, Curtiss-Wright (United States)

#Drain Series Resistances #GaAs MESFETs + Show 8 more

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Abstract

Experimental data and calculated results are presented to show that the source and drain series resistances in GaAs MESFETs are gate-voltage dependent. This dependence is caused by the gate-voltage modulation of the ungated portions of the channel. A simple analytical model is proposed that accounts for this dependence by introducing an effective gate-voltage-dependent gate length. For nominal 1- mu m gate devices the effective gate length is 0.2-0.3 mu m longer than the metallurgical gate length.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

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