Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs : Y H BYUN, M S SHUR (Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA), A PECALSKI, F L SCHUERMEYER IEEE Trans. Electron. Devices (USA), vol. 35, no. 8, pp. 1241–1246 (Aug. 1988)

doi:10.1016/0026-2692(89)90093-1

Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs : Y H BYUN, M S SHUR (Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA), A PECALSKI, F L SCHUERMEYER IEEE Trans. Electron. Devices (USA), vol. 35, no. 8, pp. 1241–1246 (Aug. 1988)

https://doi.org/10.1016/0026-2692(89)90093-1

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Journal: Microelectronics Journal

Publication Date: Jul 1, 1989

#Drain Series Resistances #Effective Gate Length + Show 8 more

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Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs : Y H BYUN, M S SHUR (Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA), A PECALSKI, F L SCHUERMEYER IEEE Trans. Electron. Devices (USA), vol. 35, no. 8, pp. 1241–1246 (Aug. 1988)

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