Abstract
Secondary ion mass spectrometry (SIMS) is one of the tools to investigate the dopant or impurity profiles of the semiconductor materials. In particular, the backside SIMS is a useful technique to examine the diffusion of dopant at the surface while minimizing knock-on effect. However, it is very difficult to prevent insulating samples from charging when O2+ source is used for positive secondary ion detection in magnetic sector SIMS. In order to overcome the problem, the authors have employed a new sample preparation method using a room-temperature direct bonding (RTDB). The authors investigated the depth profiling of insulating samples, which were stacked on a dielectric silicon dioxide films with silicon wafer as a magnetic sector SIMS instrument. The samples treated with and without RTDB were compared, and the results show that the depth profiles of RTDB-treated sample could be obtained no sign of charge-up in the backside SIMS analysis.
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More From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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