Abstract
We report the atomic-layer-deposition growth of SnO 2 thin films from SnCl 4 and H 2O 2 (case A), and SnI 4 and O 2 (case B) on (0 1 2)-oriented α-Al 2O 3 (corundum) substrates. In case A, the growth rate had a maximum at 250–500°C and slowly decreased at higher temperatures. In case B, the growth rate increased monotonically with temperature, increase being relatively slow at 500–750°C. At 500–600°C, the films grew three times faster in case B than in case A. The phase content, crystalline properties, purity, and thickness of the films were characterized by X-ray diffraction, X-ray reflection, and X-ray fluorescence spectroscopy. The films grown at 250°C and higher temperatures had tetragonal (cassiterite) structure. At 700°C in case A and 400–750°C in case B, the overgrowth could be considered as epitaxial. The orientational relationship has been determined to be (1 0 1)[0 1 0] cassiterite||(0 1 2)[1 0 0] corundum.
Published Version
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