Abstract
Spin-lattice relaxation curves in undoped hydrogenated amorphous silicon (a-Si:H) have been directly observed by pulsed electron spin resonance (ESR) technique, for the first time. The new results have shown that the spin-lattice relaxation curves follow a stretched exponential form. They also show irreversible changes in the temperature dependence of the spin-lattice relaxation time not only for annealing but also light soaking procedures in device quality films.
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