Abstract
Copolymers of methyl methacrylate (MMA) and 3‐triethoxysilylpropyl methacrylate (ESPMA) were synthesized and employed as an electron beam (EB) resist. The copolymer with a content of 10 mol% ESPMA worked as a positive EB resist and had 4–10 times as strong a resistance as poly(methylmethacrylate) (PMMA) to plasma etching. The resolution and sensitivity were almost the same as those of PMMA. From experimental results concerning the insolubility of the plasma‐irradiated copolymer and measurement of IR spectra, the enhanced resistance to plasma etching appears to be caused by formation of a cross‐linking structure based on the Si‐O‐Si linkage.
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