Abstract
A high density, low temperature, and uniform plasma was achieved using an UHF plasma source. The UHF power was coupled with a spokewise antenna assembly. The density of the CF 4/O 2 plasma was larger than 4 × 10 10 cm −3 over a plasma diameter of 300 mm and the electron temperature was around 2.5 eV. The properties of the UHF plasma source are applicable to the future ULSI processing.
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