Abstract
A new physically-based compact device model of the PiN diode is presented. A one-dimensional model for the drift zone (low doped n-base region) is presented which accurately describes conductivity modulation and non-quasistatic charge storage effects within the structure. To validate the power diode compact model, simulation results are compared with those from a detailed drift-diffusion finite-element model, as well as with experimental results (for two different devices), showing an excellent agreement in all cases. The model is found to be efficient and robust in all cases examined.
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