Abstract
AbstractA new theory is briefly presented to explain our recently observed anomalous phenomena in the mixed breakdown regime of two silicon diodes. The multiplication coefficients have larFge values at very small reverse biased voltage, first decrease with increasing bias and then drastically increase again. In the theory, both thermally generated carriers and different types of interband tunneling carriers are all included in initiating the impact ionization processes, each with a different dead space. The theory is expected to be a good approximation when the carrier distribution function is determined primarily by phonon scattering and impurity scattering. The anomalous trend in the newly observed multiplication coefficients can be well explained by the theory. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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