New Performance Indicators of Metal–Oxide–Semiconductor Field-Effect Transistors for High-Frequency Power-Conscious Design

Abstract

With the progress of complementary metal–oxide–semiconductor (CMOS) process technology, it is possible to apply CMOS devices to millimeter-wave amplifier design. However, the power consumption of the system becomes higher in proportion to its target frequency. Moreover, CMOS devices are biased at a point where the device achieves the highest gain and consumes much power. In order to reduce the power consumption without any compromise, we introduce two types of indicator. One works towards achieving the highest gain with the lowest power consumption. The other works towards achieving the highest linearity with consideration of the power consumption. In this work, we have shown the effectiveness of those indicators by applying measured data of the fabricated metal–oxide–semiconductor field-effect transistors (MOSFETs) to cascade common-source amplifiers.