Abstract
Organometallic compounds of the general formula (C 2H 5) 2XGa, where X = cyclopentadienyl [DECpGa], methylcyclopentadienyl [DE(MCp)Ga] and acethylacetonate [DEAcGa], were synthesized and investigated for their applicability to MOMBE/Ar + laser-assisted MOMBE. DECpGa showed a temperature dependence similar to that of the GaAs film growth rate with TEGa. When DE(MCp)Ga was used, laser enhancement was observed at T s=500−600°C, about 100°C higher than for TEGa and DECpGa. The laser enhancement in the higher T s region can be explained by the depression of desorption of gallium species on the substrate. (MCp)Ga, a Ga(I) compound, was assumed to be the desorbing species. However, when DEAcGa was used, no deposition occurred independent of laser irradiation. This results is ascribed to the higher pyrolysis temperature of DEAcGa. For DE(MCp)Ga, better film quality is expected both in the laser-irradiated and non-irradiated area than for TEGa or DECpGa because of the higher growth temperature.
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