Year-end Sale % OFF 
Abstract
Hot-carrier injection phenomena in submicron dimension NMOS transistors are studied by directly measuring gate current as low as 1×10-15 A. Experimental results show that two new types of injection, avalanche induced hot-hole (AHH) and hot-electron (AHE) injection, and secondary ionization induced substrate hot-electron (SIHE) injection occur in further scaled down devices with conventional structure. Both injections, in addition to already reported “Channel Hot-Electron Injection”, cause long term degradation in device characteristics. Serious degradation of transconductance is induced by AHH injection. SIHE injection also induce significant threshold voltage shift, even when VDs<3 V. Thus, these injection phenomena can be stringent constraints for the design of a submicron NMOS transistor.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
