New numerical low frequency noise model for front and buried oxide trap density characterization in FDSOI MOSFETs

Abstract

In this paper, we present a new numerical model of the inversion charge power spectral density in FDSOI MOSFET devices with ultra thin body. Numerical simulation results are compared to those of the classical formulation and to experimental data. A good agreement of measurements is obtained with the proposed model. The results show that the noise behavior in FDSOI MOSFETs is strongly related to the front and buried oxides defects, even if the channel is located at the front interface. In other words, the classical formulation of the flat-band voltage power spectral density (PSD) overestimate the front oxide trap density and no more holds true in SOI MOSFETs LFN characterization.