Abstract
In this paper, we present the modeling of low frequency noise of FD SOI devices in the front and back interface channel operations. We present an analytical model for the inversion charge power spectral density in FD SOI MOSFETs. This analytical model is valid for the different modes of operation of the device, in both the front and the back conduction regimes. The simulation results are compared to those obtained using our numerical model presented in a previous work and to experimental data. A very good agreement between both models and the measurements is obtained. We show that when only the back channel is activated, the influence of the front oxide noise contribution can be neglected.
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