Abstract
We proposed a new non-volatile memory with magnetic nano-dots (MND) dispersed in an insulating film as charge retention layer. We evaluated fundamental characteristics of FePt magnetic nano-dot film which is employed in such new magnetic nano-dot memory. We successfully formed a highly ordered L10 phase face-centered tetragonal structured FePt nano-dot (< 4.2nm) films on Si3N4 (5nm)/SiO2 (10nm)/silicon substrates and SiO2(10nm)/ silicon substrate by using SAND method. The uniformity of FePt particle size is dramatically improved by introducing a Si3N4 buffer layer on SiO2/Si substrate. In addition, it is found that FePt nano-dot film formed on Si3N4 (5nm)/SiO2(10nm)/Si substrate has a large coerce-ivity of ~22 kOe at room temperature.
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