Abstract
In this study, a new nonvolatile memory with magnetic nano-dots (MNDs) was proposed. A relatively large anisotropic change of gate current–voltage characteristics by the magnetization in magnetic non-volatile memory with Co nano floating gate and Ni-Fe control gate was obtained. A Co magnetic nano-dot film with very high dot density of 2×1013 cm-2 was successfully formed by sputtering with optimized target composition. A small anisotropic change of gate current–voltage characteristics by the magnetization in MND memory with Co MNDs and Ni-Fe control gate was observed.
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