Abstract
We report on surface Si atom density in a Si(111)-(3×1)Li structure determined from scanning tunneling microscopy observation. During a Li adsorption process on Si(111) surfaces, the imbalance of surface Si atom density between the clean (7×7) and Li-induced (3×1) structures causes the nucleation of Si islands. From measurements of the coverage of nucleated islands, we determine surface Si atom density in the Si(111)-(3×1)Li as four atoms per (3×1) unit cell and propose a structural model accounting for the present results.
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