Abstract
A new method of wafer cooling during implantation has been developed which meets the process needs of the 1990s. Cooling levels four times better than existing gas cooling techniques are achieved in a clampless, low stress system designed for high beam power. A new antistick technology is described which reduces particle contaminations and wafer breakage.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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