Abstract
A new method of evaluating crystallization activation energy of Ge2Sb2Te5 is proposed by in situ resistance measurement under isothermal annealing conditions. Linear relationship between logarithmic time and reciprocal temperature in modified Johnson–Mehl–Avrami–Kolmogorov equation is derived under the assumption that proportion of resistance drop from the initial value is closely related to crystal fraction. Crystallization activation energy thus obtained is 2.67 eV. Numerical calculation was conducted to manifest the validity of this analysis based on percolation model. Moreover, crystallization behavior of patterned single-line structure of Ge2Sb2Te5 was evaluated, and the scaling effect of increasing activation energy with decreasing line width was observed.
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