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https://doi.org/10.1063/1.1655327
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Cite Journal: Applied Physics Letters |  Publication Date: Nov 15, 1974 |
 Citations: 8 |
Affiliation: Génomique Fonctionnelle des Tumeurs Solides
By using a Pb–Al2O3–Al–n–Ge structure, it is demonstrated that the Schottky barrier height eVB at the Al–n–Ge contact can be determined through a study of the tunneling currents in this device at 1.2°K. One obtains a value for eVB = 0.49 eV.
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