Abstract
A new method for directly monitoring the electron beam intensity profile in a scanning electron microscope is proposed. This method employs phase lock-in technique which electronically differentiates the integrated current collected, while scanning the rocked electron beam across a knife edge and directly obtains the one-dimensional intensity distribution of the electron beam probe. The method can be employed for beam currents as low as 30 pA with the spatial resolution accuracy of ±125 Å. Electron beam diameters can be measured at higher accuracies due to the inherent improvement in the S/N ratio provided by this method. Electron beam aberrations can also be directly observed by studying the intensity profiles of the probe cross section.
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