Abstract
A simple closed form expression for the threshold voltage V T of non-uniformly doped short-channel IGFET's is derived by solving two-dimensional Poisson equation over the depletion region under the gate using a step doping profile approximation. An exponential dependence on channel-length L and a linear dependence on drain-to-source voltage V DS and substrate bias V BS are predicted for \Delta V_{T} , the reduction in short-channel threshold voltage. These predictions are in close agreement with measured V T charactersistics of submicron IGFET's.
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