Abstract
The electrical properties of n-type germanium single crystals irradiated with protons were studied by measuring capacitance-voltage characteristics. The thermal treatment of irradiated samples at 200–300°C leads to the formation of highly mobile shallow donor centers. The coefficient of diffusion of these donors is equal to that of atomic hydrogen with allowance for capture on traps. It is concluded that atomic hydrogen plays the role of a shallow donor in germanium.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
