Magnetic resonance and FTIR studies of shallow donor centers in hydrogenated Cz-silicon

Abstract

Three species of a shallow donor family (D1–D3) have been observed previously with infrared absorption (FTIR) and electron paramagnetic resonance (EPR) in hydrogenated Czochralski-grown Si crystals after irradiation with fast electrons and subsequent annealing in the temperature range of 300–550°C. In a further detailed EPR investigation, we resolved a hyperfine (hf) interaction with one 29Si nucleus and revealed thus the incorporation of one silicon atom in the defect core. The incorporation of one hydrogen (deuterium) atom in the core of the D1 and D2 centers was observed in electron nuclear double resonance. High resolution FTIR on 13C enriched samples showed the incorporation of one C atom in the core. By comparison of the optical and magnetic resonance spectra with those obtained previously for Si-NL10(H) and shallow thermal donors (STD(H)) it is concluded that D1 is the first species of the STD(H) and that the STD(H) defects and the NL10(H) defects are identical. These shallow donor types incorporate one hydrogen atom and, as an other impurity, C in nominally undoped Si or Al (NL10(Al)). An atomic model of the STD(H)/NL10(H) defects is presented.